Part Number Hot Search : 
PACKBMQ 00GA1 1BCPG 62R957 BR100 LLST220 RH661 683ML
Product Description
Full Text Search
 

To Download HMC31307 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 HMC313 / 313E
v04.0307
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
Features
P1dB Output Power: +14 dBm Output IP3: +27 dBm Gain: 17 dB Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26 Included in the HMC-DK001 Designer's Kit
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Typical Applications
Ideal as a Driver & Amplifier for: * 2.2 - 2.7 GHz MMDS * 3.5 GHz Wireless Local Loop * 5.0 - 6.0 GHz UNII & HiperLAN
Functional Diagram
General Description
The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers that operate from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 & HMC313E offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current.
Electrical Specifications, TA = +25 C, Vcc = +5.0V
Vcc = +5V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (IP3) @ 1.0 GHz Noise Figure Supply Current (Icc) Note: Data taken with broadband bias tee on device output. 24 11 14 Typ. DC - 6 17 0.02 7 6 30 14 15 27 6.5 50 20 0.03 Max. GHz dB dB/C dB dB dB dBm dBm dBm dB mA Units
5 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC313 / 313E
v04.0307
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
Gain vs. Temperature
25
Gain & Return Loss
25 20 15 RESPONSE (dB) 10
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
5 - 29
20
GAIN (dB)
5 0 -5 -10 -15 -20 0 1 2 3
S11 S21 S22
15
+ 25 C + 85 C - 40 C
10
5
0 4 5 6 7 0 1 2 3 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz)
Input & Output Return Loss
0
Reverse Isolation
0
-10 RETURN LOSS (dB) -5 ISOLATION (dB)
S11 S22
-20
-10
-30
-15
-40
-20 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
-50 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
P1dB vs. Temperature
25
Psat vs. Temperature
25
+ 25 C + 85 C - 40 C
20 P1dB (dBm)
+ 25 C + 85 C - 40 C
20 Psat (dBm)
15
15
10
10
5
5
0 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
0 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC313 / 313E
v04.0307
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Output IP3 vs. Temperature
40 35 30 IP3 (dBm) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
+ 25 C + 85 C - 40 C
Power Compression @ 1.0 GHz
20 Pout (dBm), Gain (dB), PAE (%) 15 10 5 0 -5
Pout (dBm) Gain (dB) PAE (%)
-10 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm)
-2
0
2
4
Power Compression @ 3.0 GHz
20 Pout (dBm), Gain (dB), PAE (%) 15 10 5 0 -5
Pout (dBm) Gain (dB) PAE (%)
-10 -22 -20 -18 -16 -14 -12 -10 -8 -6 INPUT POWER (dBm)
-4
-2
0
2
5 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC313 / 313E
v04.0307
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 3.99 mW/C above 85 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc +20 dBm 150 C 0.259 W 251 C/W -65 to +150 C -40 to +85 C Class 1A
5
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND
Package Information
Part Number HMC313 HMC313E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1
[1]
Package Marking [3] H313 XXXX 313E XXXX
[2]
[1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 31
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
HMC313 / 313E
v04.0307
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1
RFOUT
This pin is DC coupled. An off chip DC blocking capacitor is required.
3
RFIN
This pin is DC coupled. An off chip DC blocking capacitor is required.
2, 4-6
GND
These pins must be connected to RF/DC ground.
Application Circuit
Recommended Bias Resistor Values for Icc = 50 mA, Rbias = (Vs - 5.0) / Icc
Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 5V 0 6V 20 1/4W 8V 62 1/2W
Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3.
5 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC313 / 313E
v04.0307
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
Evaluation PCB
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
List of Materials for Evaluation PCB 104217
Item J1 - J2 U1 PCB [2] Description PCB Mount SMA Connector HMC313 / HMC313E Evaluation PCB 1.5" x 1.5"
[1]
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350
The circuit board used in the final applicatin should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 33


▲Up To Search▲   

 
Price & Availability of HMC31307

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X